The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Mar. 19, 2003
Hung-dar Wang, Kaohsiung, TW;
Shih-chin Gong, Taipei, TW;
Hung-Dar Wang, Kaohsiung, TW;
Shih-Chin Gong, Taipei, TW;
Asia Pacific Microsystems, Inc., Hsinchu, TW;
Abstract
The present invention relates to a silicon pressure sensor that in need of three strips of piezoresistors on each side and the manufacturing method thereof; wherein, the impurity concentration of the piezoresistors are about 10cmin order to reduce the influence of temperature; the lead between the piezoresistors (namely the internal connection lead) is a highly-doping interconnect (about 10cm) fabricated along the direction with minimum piezoresistance coefficient; with regard to the connection circuit for connecting the piezoresistors with the external Wheatstone bridge circuit (namely the external connection circuit), of which one end near the inner side of the membrane is also fabricated along the direction with minimum piezoresistance coefficient, and another end of the lead near the edge of the membrane is a interconnect that is perpendicular to the diaphragm, and is connected out to the external circuit; with this structure, the four resistors of the Whetstone bridge are balanced and symmetrized, thus the zero offset caused by the variations in resistance of the bridge can be reduced in order to simplify the signal-processing circuit.