The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Feb. 12, 2003
Sang-woong Yoon, Seoul, KR;
Hoe-sik Chung, Yongin, KR;
Jin-a Ryu, Daegu, KR;
Young-ho Kim, Yongin, KR;
Sang-woong Yoon, Seoul, KR;
Hoe-sik Chung, Yongin, KR;
Jin-a Ryu, Daegu, KR;
Young-ho Kim, Yongin, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed. The anti-reflective layer and the photoresist layer are simultaneously developed.