The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6838217 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 04, 2005

Filed:

Jun. 06, 2002
Applicants:

Yi-lin Chen, Taipei, TW;

Szu-ping Chen, Taipei, TW;

Chin-chuan Hsieh, Hsin-chu, TW;

Inventors:

Yi-Lin Chen, Taipei, TW;

Szu-Ping Chen, Taipei, TW;

Chin-Chuan Hsieh, Hsin-chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 900 ; G03C 500 ;
U.S. Cl.
CPC ...
Abstract

A new method is provided for the creation of a dummy pattern. A typical wafer exposure mask contains a Clear Out Window (CLWD) pattern, this CLWD pattern is of no value during the process of shielding the area on the surface of the wafer where the alignment mark must be placed. This CLWD can therefore be used to create a dummy overlay pattern, resulting in a reduction in the wafer scaling error that typically occurs as a result of metal deposition. For the same reasons, a dummy overlay pattern can also be created in the scribe lines of the wafer surface.


Find Patent Forward Citations

Chen, Yi-Lin. (2005). Define overlay dummy pattern in mark shielding region to reduce wafer scale error caused by metal deposition (U.S. Patent No. 6838217). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6838217

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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