The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Oct. 22, 2001
Hiroshi Tanaka, Hyogo, JP;
Naoki Yokoi, Hyogo, JP;
Yasuhiro Asaoka, Hyogo, JP;
Seiji Muranaka, Hyogo, JP;
Toshihiko Nagai, Osaka, JP;
Hiroshi Tanaka, Hyogo, JP;
Naoki Yokoi, Hyogo, JP;
Yasuhiro Asaoka, Hyogo, JP;
Seiji Muranaka, Hyogo, JP;
Toshihiko Nagai, Osaka, JP;
Renesas Technology Corp., Tokyo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.