The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Mar. 04, 2002
Applicants:

Ismail Kashkoush, Orefield, PA (US);

Gim-syang Chen, Allentown, PA (US);

Richard Ciari, Santa Clara, CA (US);

Richard E. Novak, Plymouth, MN (US);

Inventors:

Ismail Kashkoush, Orefield, PA (US);

Gim-Syang Chen, Allentown, PA (US);

Richard Ciari, Santa Clara, CA (US);

Richard E. Novak, Plymouth, MN (US);

Assignee:

Akrion LLC, Allentown, PA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B08B 300 ;
U.S. Cl.
CPC ...
Abstract

A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.


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