The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Aug. 14, 2001
Applicants:

Masayuki Nakano, Minato-Ku, JP;

Yoichi Deguchi, Minato-Ku, JP;

Inventors:

Masayuki Nakano, Minato-Ku, JP;

Yoichi Deguchi, Minato-Ku, JP;

Assignee:

Tokyo Electron Limited, Tokyo-To, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03D 500 ;
U.S. Cl.
CPC ...
Abstract

A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.


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