The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Mar. 22, 2000
Takashi Kano, Hirakata, JP;
Hiroki Ohbo, Hirakata, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
An n-current blocking layer is formed by alternately stacking an n-first current blocking layer of a nitride based semiconductor containing Al or B and an n-second current blocking layer of a nitride based semiconductor containing In. In a semiconductor laser device having a real refractive index guided structure, the mean refractive index of the n-current block layer is smaller than the refractive indices of a p-first cladding layer and a p-second cladding layer. In a semiconductor laser device having a loss guided structure, the mean band gap of the n-current blocking layer is substantially equal to or smaller than the mean band gap of an active layer.