The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Jan. 27, 2003
Mitsuhiro Tanaka, Handa, JP;
Tomohiko Shibata, Kasugai, JP;
Osamu Oda, Nishikasugai-gun, JP;
Takashi Egawa, Nagoya, JP;
NGK Insulators, Limited, Nagoya, JP;
Abstract
An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device has an underlayer made of nitride semiconductor containing Al and a dislocation density of 10 /cm or less. The device further has an n-type conductive layer and p-type conductive layer each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 /cm or less. The device still further has a light emitting layer composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 /m or less, as well.