The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Jun. 03, 2002
Applicant:
Inventors:
Wei-Cheng Lee, Taipei, TW;
Wen-Chen Chien, Taipei, TW;
Yu-Da Fan, Taipei, TW;
Kuo-Yen Liu, Taipei, TW;
Yu-Ching Chang, Hsichu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/348 ;
Abstract
Within a method for forming a microelectronic fabrication there is provided a substrate having formed thereover a patterned dielectric layer which defines a via. There is also formed within a lower portion of the via a tungsten stud layer having a recess thereabove within the via. There is also formed within the recess a patterned conductor capping layer formed of a conductor material other than tungsten. The patterned conductor capping layer may seal a void formed within the tungsten stud layer.