The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Mar. 03, 2003
Applicant:
Inventors:
Yung-Hsien Wu, Taipei, TW;
Cheng-Che Lee, Taichung, TW;
Assignee:
ProMOS Technologies, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ; H01L 2/1336 ; H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ; H01L 2/1336 ; H01L 2/120 ;
Abstract
A capacitor dielectric structure of a deep trench capacitor for a DRAM cell. A semiconductor silicon substrate is provided wit a deep trench. Silicon nitride deposition is used to form a silicon nitride layer on the sidewall and bottom of the deep trench. An oxynitride process with wet oxidation and N O reactive gas is used to form an oxynitride layer on the silicon nitride layer. A post oxynitride growth annealing is performed on the oxynitride layer.