The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Sep. 26, 2003
Applicant:
Inventors:
Annalisa Cappellani, Portland, OR (US);
Ludwig Dittmar, Dresden, DE;
Dirk Schumann, Schönfliess, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ;
Abstract
A gate layer stack formed with at least two layers is firstly patterned anisotropically and then thelower layer is etched. An isotropic, preferably selective etching step effects a lateral undercutting, i.e. removal of the lower layer as far as the predetermined channel length to form a dimensionally accurate T-gate transistor with a very short channel length.