The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Sep. 23, 2002
Boil Pashmakov, Troy, MI (US);
Ovonyx, Inc., Boise, ID (US);
Abstract
The present invention is a method of data storage using a phase-change memory clement operating within its amorphous phase. The element stores at least one bit of data upon the application of a pulse that resets the element to one of at least a first resistance state and a second resistance state. Since the threshold voltage of a memory element varies linearly with its programmed resistance, the stored data can be read by the application of one or more discriminating voltages to the element. The current flowing through the element is limited to prevent a phase change when an applied discriminating voltage is greater than the threshold voltage. When the applied discriminating voltage is less than the threshold voltage, current flowing through the memory element is not limited. Based upon these current outputs, the resistance state of the element is determined.