Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

Abstract

In one implementation, a plasma etching method comprises forming a Ge Se chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the Ge Se chalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the Ge Se comprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After exposing, the Ge Se chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the Ge Se chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.