The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
May. 28, 2003
Applicant:
Inventors:
Dae-Keun Kang, Suwon-si, KR;
Yong-Sun Ko, Suwon-si, KR;
In-Seak Hwang, Suwon-si, KR;
Byoung-Moon Yoon, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
After a silicidation blocking pattern is formed on a substrate including silicon, the silicidation blocking pattern is hardened by a thermal annealing process. The substrate is rinsed to remove a native oxide film formed on the substrate, and then a silicide film is formed on a portion of the substrate exposed by the silicidation blocking pattern. The silicide film can thus be formed in an exact portion of the substrate, and the substrate is not damaged during rinsing.