The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Jun. 17, 2003
James Pan, Fishkill, NY (US);
Paul Besser, Sunnyvale, CA (US);
Christy Mei-Chu Woo, Cupertino, CA (US);
Minh Van Ngo, Fremont, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Gate dielectric degradation due to plasma damage during replacement metal gate processing is cured and prevented from further plasma degradation by treatment of the gate dielectric after removing the polysilicon gate. Embodiments include low temperature vacuum annealing after metal deposition and CMP, annealing in oxygen and argon, ozone or a forming gas before metal deposition, or heat soaking in silane or disilane, before metal deposition.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile