The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Apr. 04, 2002
Applicant:
Inventor:
Pei-Yang Yan, Saratoga, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract
A method of making a photolithographic mask includes forming a metal-silicon layer on a substrate, and processing at least a portion of the metal-silicon layer. The metal-silicon layer has a first thickness and the portions of the metal-silicon layer are processed to a second thickness that is less than the first thickness. The method also includes forming a reflector layer on the metal-silicon layer to produce a mask blank and then forming the mask from the mask blank. The mask blank includes the substrate, metal-silicon layer, and reflector layer.