The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Jul. 18, 2002
Katsuhisa Yuda, Tokyo, JP;
Hiroshi Tanabe, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A silicon oxide film has a ratio of A to A which is not higher than 0.21, where A is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of a wave-number of 970 cm , and A is a second peak integrated intensity of a second peak belonging to O—Si—O and appearing in the vicinity of a wave-number 820 cm , and each of the first and second peak integrated intensities is defined as a product of peak width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that a ratio of a first flow rate Fo of oxygen gas to a second flow rate Fsi of a silicon source gas is not lower than 20.