The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Apr. 30, 2002
Yoshitaka Fujiishi, Hyogo, JP;
Satoshi Kawasaki, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Excessive CMP (chemical mechanical polishing) of a resistive band region and margin deterioration in processing in a subsequent step are prevented, while a resistive zone is formed with an active region. In the semiconductor device, a source/drain impurity diffusion layer is used as the resistive zone. On a semiconductor substrate, the resistive band region to form the resistive zone, having at least a portion of a surface provided as the active region, is formed. In the resistive band region, the resistive zone is provided. A word line is arranged on the semiconductor substrate so as to surround the resistive zone. In the resistive band region, the area occupancy ratio of the active region per 10 &mgr;m□ is set to be 40% or higher.