The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Jun. 14, 2001
Shunpei Yamazaki, Tokyo, JP;
Toru Mitsuki, Kanagawa, JP;
Kenji Kasahara, Kanagawa, JP;
Taketomi Asami, Kanagawa, JP;
Tamae Takano, Kanagawa, JP;
Takeshi Shichi, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
Crystal orientation planes exist randomly in a crystalline silicon film manufactured by a conventional method, and the orientation ratio is low with respect to a specific crystal orientation. A semiconductor film having a high orientation ratio for the {101} lattice plane is obtained if crystallization of an amorphous semiconductor film, which has silicon as its main constituent and contains from 0.1 to 10 atom % germanium, is performed after introduction of a metal element. A TFT is manufactured utilizing the semiconductor film.