The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Oct. 13, 2000
Rao Annapragada, Union City, CA (US);
William F. Bosch, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Process for etching features in wafers incorporating OSG dielectrics. The process results at once in minimal RIE lag, minimal bowing of the features formed by the etch process, good etch profiles, good resist selectivity, and good etch uniformity across the wafer. In order to provide these desirable results, a novel etch gas mixture, including CH2F2 and CF4 is employed. According to one embodiment of the present invention, this novel gas mixture is employed as part of a three-step etch process wherein the several etch steps have varying degrees of etch selectivity between wafer components. The methodology of the present invention is capable of implementation on a wide variety of existing semiconductor etch equipment.