The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Dec. 30, 2002
Applicant:
Inventors:
Jun Zeng, Torrance, CA (US);
Ming-Jiang Zhou, Torrance, CA (US);
Tzong-Shiann Wu, Torrance, CA (US);
Assignee:
Pyramis Corporation, Torrance, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1332 ;
U.S. Cl.
CPC ...
H01L 2/1332 ;
Abstract
A method for manufacturing a gate pad protection structure applied in a power semiconductor device is provided. The method includes steps of (a) forming a gate oxide layer on a substrate, (b) forming a polysilicon layer on the gate oxide layer, (c) forming a polysilicon window and a polysilicon window array on the polysilicon layer, and (d) performing an ion implantation via the polysilicon window and the polysilicon window array.