The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Jan. 14, 2004
Applicant:
Inventor:
Michael A. Vyvoda, San Jose, CA (US);
Assignee:
Matrix Semiconductor, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/9788 ; H01L 2/9792 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/9788 ; H01L 2/9792 ;
Abstract
A semiconductor device contains a word line, a charge storage region located above the word line, an active layer located above the charge storage region, a patterned etch stop layer located above a first portion of the active layer, and bit lines located over a portion of the etch stop layer and over second portions of the active layer.
Vyvoda, Michael. (2004). Inverted staggered thin film transistor with etch stop layer and method of making same (U.S. Patent No. 6825533). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6825533
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile