The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Jul. 30, 2002
Brazel G. Preece, Vancouver, WA (US);
Seh America, Inc., Vancouver, WA (US);
Abstract
A method of measurement of wafers to isolate wafer support-related defects involves Scanning Infrared Depolarization (SIRD) measurement of multiple processed wafers, each oriented differently on the wafer support, to obtain and characterize depolarization stress defects. The method mounts first and second wafers in first and second orientations and performs a SIRD scan of each. The results are correlated to isolate orientation dependent defects from non-orientation dependent defects. Orientation dependent defects are characterized as wafer support-related defects. Analysis of such wafer support-related defects may then be used to identify and correct the corresponding wafer support defect.