The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2004

Filed:

Jun. 25, 2003
Applicant:
Inventors:

Zvonimir Gabric, Zorneding, DE;

Werner Pamler, Munich, DE;

Siegfried Schwarzl, Neubiberg, DE;

Assignee:

Infineon Technologies AG, Münich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10L 2/130 ; H01L 2/146 ;
U.S. Cl.
CPC ...
H10L 2/130 ; H01L 2/146 ;
Abstract

A method referred to as a “cellular damascene method” utilizes a multiplicity of regularly arranged closed cavities referred to as “cells”, which are produced in a patterning layer. The dimensions of the cavities are on the order of magnitude of the microstructures to be produced. Selected cavities are opened by providing a mask and partitions situated between adjacent opened cavities are removed to provide trenches and holes which are filled with the material of the microstructure to be fabricated. Protruding material is removed by means of a chemical-mechanical polishing step. The microstructures are, in particular, interconnects and contact holes of integrated circuit.


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