The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Oct. 15, 2002
Daisuke Abe, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The invention provides a method for fabricating a transistor in which the bulk characteristics of the gate insulating film and the interface characteristics can be simultaneously improved by a low-temperature process. The method can include the step of forming a semiconductor film on a substrate, the step of forming a gate insulating film on the semiconductor film by depositing a silicon oxide film by a diode parallel plate plasma enhanced CVD process using at least TEOS and oxygen as source materials, the step of forming a metal film, which accelerates the decomposition of gases permeated into the gate insulating film, on the gate insulating film, and the step of performing low-temperature heat treatment on the gate insulating film. Accordingly, it is possible to form high-quality gate insulating film having both satisfactory bulk and interface characteristics by a low temperature process.