The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Mar. 26, 2002
Applicant:
Inventors:
Masatomo Shibata, Tokyo, JP;
Naotaka Kuroda, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/504 ;
U.S. Cl.
CPC ...
C30B 2/504 ;
Abstract
A metal film is deposited on a starting substrate, which is any one of a single crystal sapphire substrate, a substrate comprising a single crystal gallium nitride film grown on a sapphire substrate, and a single crystal semiconductor substrate, and a gallium nitride film is deposited on the metal film to form a laminate substrate. By virtue of the above construction, after the growth of the gallium nitride film, the gallium nitride film can be easily separated from the starting substrate, and a gallium nitride crystal substrate, which has low defect density and has not been significantly contaminated with impurities, can be produced in a simple manner.