The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Feb. 29, 2000
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser, including: an n-type cladding layer that has n-type conductivity; an active layer formed on top of the n-type cladding layer; a p-type cladding base layer that is formed on top of the active layer and has p-type conductivity; a current-blocking layer that is formed on specified parts of an upper surface of the p-type cladding base layer and substantially has n-type conductivity; and a p-type buried cladding layer that has p-type conductivity and is formed so as to cover the current-blocking layer and contact remaining parts of the upper surface of the p-type cladding base layer. The current-blocking layer has at least two regions having different concentrations (hereafter “N1” and “N2” where N1<N2) of n-type carriers, a region adjacent to an interface between the p-type cladding base layer and the p-type buried cladding layer having the N1 concentration of n-type carriers and a part or, all of a remaining region of the current-blocking layer region having the N2 concentration.