The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2004

Filed:

Oct. 30, 2002
Applicant:
Inventors:

Christine Hau-Riege, Fremont, CA (US);

Stefan Hau-Riege, Fremont, CA (US);

Amit P. Marathe, Fremont, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
S01R 2/726 ;
U.S. Cl.
CPC ...
S01R 2/726 ;
Abstract

Electromigration permeability is determined for a layer material within an interconnect test structure comprised of a feeder line, a test line, and a supply line. A no-flux structure is disposed between the feeder line and the test line, and the layer material is disposed between the test line and the supply line. A respective current density and length product for each of the test line and the supply line is less than a critical Blech length constant, (J*L) . A net current density and length product (J*L) for the test line and the supply line is greater than the (J*L) . The electromigration permeability of the layer material is determined from an electromigration lifetime of the interconnect test structure with current flowing therein.


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