The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6822472 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 23, 2004

Filed:

Jun. 27, 2003
Applicant:
Inventors:

Sanjit K. Das, Pougkeepsie, NY (US);

Anthony K. Stamper, Williston, VT (US);

Eric J. White, Charlotte, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ;
U.S. Cl.
CPC ...
G01R 3/126 ;
Abstract

A detection system and method including a means for performing a test on a semiconductor device and obtaining test data therefrom. The semiconductor device includes an insulating layer, a hard mask layer on a surface of the insulating layer, and a plurality of electrically conductive lines within a trench in the insulating layer. The insulating layer comprises a first dielectric material. The hard mask layer comprises a second dielectric material. The dielectric constant of the second dielectric material exceeds the dielectric constant of the first dielectric material or the second dielectric material comprises an element that is not comprised by the first dielectric material. The test data is a function of a spatial distribution of the hard mask layer on the surface of the insulating layer. The detection system and method includes a means for determining from the test data a measure of the spatial distribution of the hard mask layer on the surface of the insulating layer.


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