The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Mar. 24, 2003
Peter Voigt, Hallbergmoos, DE;
Gerhard Enders, Olching, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A trench cell for use in a DRAM array includes a vertical selection transistor of a first conductivity type at the—seen in the bit line direction—first side of the trench hole, a blocking doping region near the surface, of a second conductivity type, is provided adjacent to the trench hole, the blocking doping region lying opposite the vertical selection transistor. As a result, leakage currents can be avoided and, in addition, the trench cells can be disposed at a shorter distance from one another.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile