The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Jan. 02, 2002
Shinichi Imai, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method for manufacturing a semiconductor device of the present invention includes the steps of: (a) depositing an interlayer insulator film on a substrate including a plurality of conductive layers; (b) forming a plurality of contact holes running through the interlayer insulator film to reach respective ones of the plurality of conductive layers, each of the contact holes having a tapered portion at an upper end thereof; (c) depositing a conductive material film on the interlayer insulator film so as to fill the plurality of contact holes; (d) removing the conductive material film until a surface of the interlayer insulator film is exposed so as to form a plurality of plugs made of the conductive material film filling the plurality of contact holes; and (e) removing a portion of the interlayer insulator film, which has been exposed in the step (d), so as to remove the tapered portions.