The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Aug. 30, 2001
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
In the manufacture of a semiconductor laser device, a low temperature buffer layer is grown on a sapphire substrate at a growth rate of 25 to 30 Å/sec. On the low temperature buffer layer, an n-GaN layer, a anti-crack layer, an n-cladding layer, an n-guide layer, an MQW active layer, a p-carrier blocking layer, a p-guide layer, a p-cladding layer and a p-contact layer are grown in this order. The growth of the low temperature buffer layer at the high growth rate allows a good low temperature buffer layer to be stably provided with good reproducibility. Thus, good crystallinity and electrical characteristics can stably be provided in the above layers.