The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2004

Filed:

Mar. 04, 2003
Applicant:
Inventors:

Tse-Lun Tsai, Taipei, TW;

Yu-Tai Chia, San Jose, CA (US);

JC Guo, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/012 ; H01G 4/228 ;
U.S. Cl.
CPC ...
H01G 4/012 ; H01G 4/228 ;
Abstract

A capacitor has at least two layers of substantially parallel interdigitated strips. The strips of each layer are alternately connected to a first and a second bus. The first and second buses of each layer are interconnected to first and second buses of an adjacent layer. The strips of each layer are approximately perpendicular to strips of an adjacent layer. The capacitor further includes dielectric material between strips of the same and different layers. A method of fabricating the capacitor includes forming at least two layers of substantially parallel interdigitated strips which are alternately connected to first and second buses of each layer. The buses of each layer are connected to the respective buses of an adjacent layer. The strips of one layer are approximately perpendicular to the strips of an adjacent layer. Dielectric material is formed between strips of the same and different layers.


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