The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Jul. 30, 2003
Jane Xin-LeBlanc, Santa Clara, CA (US);
Wai Lau, Taikoo Shing, HK;
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A pre-charge circuit capable of pre-charging a high-impedance node of an operation circuit to a target voltage when a pre-charge signal driving the pre-charge circuit is enabled. The pre-charge circuit comprises: 1) a charge voltage circuit for charging an internal common node of the pre-charge circuit to the target voltage when the pre-charge signal is enabled; 2) a transmission gate switch for coupling the internal node to the high-impedance node when the pre-charge signal is enabled, the transmission gate switch comprising a first N-channel transistor having a drain coupled to the high-impedance node, a gate coupled to a Logic 1 when the pre-charge signal is enabled, and a source coupled to the internal common node; and 3) a gate-biasing circuit driven by the pre-charge signal, wherein the gate-biasing circuit is off when the pre-charge signal is enabled and generates a negative Vgs bias on the first N-channel transistor when the pre-charge signal is disabled to thereby reduce leakage current in said first N-channel transistor.