The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2004

Filed:

Aug. 04, 2003
Applicant:
Inventors:

Hideki Takehara, Kobe, JP;

Noriyuki Yoshikawa, Ibaraki, JP;

Kunihiko Kanazawa, Mukou, JP;

Seiichi Nakatani, Hirakata, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/306 ; H01L 2/310 ; H01L 2/315 ; H01L 2/322 ; H01L 2/324 ; H01L 2/312 ; H01L 2/3053 ; H01L 2/334 ;
U.S. Cl.
CPC ...
H01L 2/306 ; H01L 2/310 ; H01L 2/315 ; H01L 2/322 ; H01L 2/324 ; H01L 2/312 ; H01L 2/3053 ; H01L 2/334 ;
Abstract

A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.


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