The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Mar. 12, 2003
Chieh-Hsiung Kuan, Taipei, TW;
Hsin-Cheng Chen, Tainan Hsien, TW;
Chun-Chi Chen, Tainan, TW;
Sheng-Di Lin, Taipei, TW;
Jen-Hsiang Lu, Taichung, TW;
Other;
Abstract
An infrared photodetector structure with voltage-tunable and -switchable photoresponses constructed of superlattices and blocking barriers. The photoresponses of the double-superlattice structure are also insensitive to the operating temperature changes. By using GaAs/Al Ga As system, the feasibility of this idea is verified. In the embodiment, the photoresponses can be switched between 6˜8.5 and 7.5˜12 m by the bias polarity and are also tunable by the bias magnitude in each detection wavelength range. In addition, the photoresponses are insensitive to operating temperatures ranging from 20 to 80 K. For the SLIP with few periods, the responsivity may be higher than the one with many periods and the operational temperature is higher. These results show the invention can be useful in the design of multicolor imaging systems. This invention is not only applicable for wavelengths comparable with the embodiment, but can also be applied to the detection of radiation in the range from visible to extreme far infrared.