The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Aug. 23, 2002
William A. Stanton, Boise, ID (US);
Eugene A DeLaRosa, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The present invention is generally directed to various reticle writing methodologies to reduce write time, and a system for performing same. In one illustrative embodiment, the method comprises exposing a layer of photoresist in accordance with a first writing pattern in a first area of the layer of photoresist and exposing the layer of photoresist in accordance with a second writing pattern in a second area of the layer of photoresist, the first and second areas of the layer of photoresist overlapping one another in at least one region. In another illustrative embodiment, the method comprises creating a collection of digital data corresponding to a desired pattern for a reticle and separating the collection of digital data into at least two separate groups of data, a first of the data groups being used to define a first writing pattern for the reticle, a second of the data groups being used to define a second writing pattern for the reticle, wherein the first and second writing patterns overlap one another in at least one region. In yet another illustrative embodiment, the method comprises forming a layer of photoresist above at least one of a semiconducting substrate and a process layer, exposing the layer of photoresist in accordance with a first writing pattern in a first area of the layer of photoresist, and exposing the layer of photoresist in accordance with a second writing pattern in a second area of the layer of photoresist, wherein the first and second areas overlap one another in at least one region.