The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Aug. 19, 2002
Applicant:
Inventors:
Jonathan Philip Davis, Mechanicsville, VA (US);
Stephen M. Rusinko, Jr., Chester, VA (US);
Assignee:
Infineon Technologies Richmond, LP, Sandston, VA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A semiconductor memory device comprises a trench etched from a substrate below a shallow trench isolation and a doped collar oxide. The device further comprises a buried-strap junction formed adjacent to the shallow trench isolation and above the collar oxide, and a channel stop formed below the buried-strap junction, wherein a junction between the channel stop and the buried-strap junction is formed in the substrate.
Davis, Jonathan. (2004). Dram having improved leakage performance and method for making same (U.S. Patent No. 6818534). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6818534
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile