The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Oct. 02, 2002
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ; H01L 2/1461 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ; H01L 2/1461 ; H01L 2/1302 ;
Abstract
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed outwardly of the first oxide layer. A second oxide layer is formed outwardly of the nitride layer. A trench is formed through the first oxide layer, the nitride layer, and the second oxide layer and into the semiconductor layer. With the second oxide layer protecting an upper surface of the nitride layer, the nitride layer is etched to form a lateral recessed side boundary of the trench at the nitride layer. The shallow trench isolation layer is formed in the trench.