The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2004

Filed:

Feb. 19, 2004
Applicant:
Inventors:

Kevin D. Lucas, Meylan, FR;

Robert E. Boone, Grenoble, FR;

Lloyd C. Litt, Austin, TX (US);

Wei E. Wu, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G06F 1/750 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G06F 1/750 ;
Abstract

A method of generating a design of a reticle for a photolithography process. The reticle may include phase shift features, binary features, and mixed features. The method includes generating a reticle design from a pattern layout and then optimizing the reticle design. In some examples, generating the reticle design includes binning the features of the layout based on feature width. Examples of optimization operations include an over/under operation, an under/over operation, a feature segment expansion operation, a feature edge portion conversation from a binary portion to a phase shift portion, a corner binary segment expansion, a discontinuity removal operation, and a feature dimension change operation that includes a determination of a Mask Error Factor (MEF).


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