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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6815781 B1

PDFFull Text
Date of Patent:
Nov. 09, 2004

Filed:

Oct. 15, 2002

Inverted staggered thin film transistor with salicided source/drain structures and method of making same

Applicant:
Inventors:

Michael A. Vyvoda, San Jose, CA (US);

S. Brad Herner, San Jose, CA (US);

Christopher J. Petti, Mountain View, CA (US);

Andrew J. Walker, Mountain View, CA (US);

Assignee:

Matrix Semiconductor, Inc., Santa Clara, CA (US);

Attorney:

Foley & Lardner LLP

Primary Examiner:

Nathan J Flynn

Assistant Examiner:

Victor A Mandala, Jr

Int. Cl.
CPC ...
H01L 2/975 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/975 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract

A semiconductor device, such as an inverted staggered thin film transistor, includes a gate electrode, a gate insulating layer located above the gate electrode, an active layer located above the gate insulating layer and an insulating fill layer located above the active layer. A first opening and a second opening are located in the insulating fill layer, a first source or drain electrode is located in the first opening and a second source or drain electrode is located in the second opening. At least one of the first and the second source or drain electrodes comprise a polysilicon layer and a metal silicide layer.

Find Patent Forward Citations

Vyvoda, Michael. (2004). Inverted staggered thin film transistor with salicided source/drain structures and method of making same (U.S. Patent No. 6815781). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6815781

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