The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Mar. 31, 2003
Jae-Seung Hwang, Gyeonggi-do, KR;
Sung-Un Kwean, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
After an etching stop layer and an interlayer dielectric film are formed on a semiconductor substrate including a contact formation portion, a polysilicon film and a anti-reflective layer are successively formed on the interlayer dielectric film. A second mask pattern exposing the polysilicon film is formed after etching the anti-reflective layer exposed through a first mask pattern. A third mask pattern is formed by attaching polymer on a sidewall of the second mask pattern. A contact hole exposing the contact formation portion is formed by etching the polysilicon film and the interlayer dielectric film using the third mask pattern as an etching mask. A conductive material is filled in the contact hole to form the contact. By attaching the polymer to the second mask pattern, a contact hole with a minute size can be formed.