The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Apr. 18, 2002
Applicant:
Inventors:
Rainer Leuschner, Mohegan Lake, NY (US);
George Stojakovic, Hopewell Junction, NY (US);
Xian J. Ning, Mohegan Lake, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A resistive memory device ( ) and method of manufacturing thereof comprising a cap layer ( ) and hard mask layer ( ) disposed over magnetic stacks ( ), wherein either the cap layer ( ) or hard mask layer ( ) comprise WN. A seed layer ( ) disposed beneath the magnetic stacks ( ) may also be comprised of WN, The use of the material WN improves etch process selectivity during the manufacturing process.
Leuschner, Rainer. (2004). Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in mram processing (U.S. Patent No. 6815248). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6815248
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile