The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Mar. 25, 2002
Applicant:
Inventors:
Wan-don Kim, Yongin, KR;
Cha-young Yoo, Suwon, KR;
Doo-sup Hwang, Yongin, KR;
Jae-hyun Joo, Seoul, KR;
Eun-ae Chung, Daegu, KR;
Yong-kuk Jeong, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 7/06 ;
U.S. Cl.
CPC ...
H01G 7/06 ;
Abstract
A method for manufacturing a capacitor of a semiconductor memory device by controlling thermal budgets is provided. In the method for manufacturing a capacitor of a semiconductor memory device, a lower electrode is formed on a semiconductor substrate. The lower electrode is heat-treated with a first thermal budget. A dielectric layer is formed on the heat-treated lower electrode. The dielectric layer is crystallized by heat-treating the dielectric layer with a second thermal budget which is smaller than the first thermal budget.