The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Mar. 25, 2002
Applicant:
Inventors:
Tetsuya Takeuchi, Sunnyval, CA (US);
Ying-Lan Chang, Cupertino, CA (US);
David P. Bour, Cupertino, CA (US);
Michael H. Leary, Fremont, CA (US);
Michael R. T. Tan, Menlo Park, CA (US);
Assignee:
Agilent Technologies, Inc., Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 ; H01S 3/08 ;
U.S. Cl.
CPC ...
H01S 5/00 ; H01S 3/08 ;
Abstract
Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.