Semiconductor integrated circuit device

Abstract

A semiconductor integrated circuit device is provided, in which variation in the threshold voltage of a MISFET, for example, a MISFET pair that constitute a sense amplifier, can be reduced. In a logic circuit area over which a logic circuit such as a sense amplifier circuit required to drive a memory cell is formed, n-type active areas having no gate electrode are arranged at both edges of active areas over which a p-channel MISFET pair for constituting a sense amplifier are formed. Assuming that the width between active areas nwp and nw is L the width between active areas nwp and nw is L and the width between active areas nwp and nwp is L (L −L ), (L −L ), and (L −L ) are set equal to almost zero or smaller than twice the minimum processing dimension, so that the variation in shape of the device isolation trenches with the widths L L and L can be reduced, and the threshold voltage difference in the MISFET pair can be reduced.