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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6812510 B1

PDFFull Text
Date of Patent:
Nov. 02, 2004

Filed:

Feb. 21, 2003

Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory

Applicant:
Inventors:

Yoshimasa Horii, Kawasaki, JP;

Osamu Matsuura, Kawasaki, JP;

Katsuyoshi Matsuura, Kawaskai, JP;

Kazuaki Takai, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

David Nelms

Assistant Examiner:

Andy Huynh

Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A ferroelectric capacitor having a ferroelectric layer and a pair of electrodes, in which the ferroelectric layer contains carbon or carbon atoms of 5×10 cm or less, and the pair of electrodes is formed by a MOCVD (Metal Organic Chemical Vapor Deposition) method. A process for manufacturing a ferroelectric capacitor having the steps of forming a ferroelectric layer on one of a pair of electrodes; heating the layer at a temperature higher than when forming the layer, and to form the other electrode on the ferroelectric layer, or the steps of forming a ferroelectric layer on one of a pair of electrodes; forming the other electrode on the ferroelectric layer; and heating the layer at a temperature higher than when forming the layer to form the other electrode on the ferroelectric layer, to control carbon atoms of the ferroelectric layer to be 5×10 cm or less.

Find Patent Forward Citations

Horii, Yoshimasa. (2004). Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory (U.S. Patent No. 6812510). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6812510

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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