The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Dec. 31, 2002
Applicant:
Inventors:
Wen-Chin Yeh, Fremont, CA (US);
Venkatesh Gopinath, Fremont, CA (US);
Arvind Kamath, Mountain View, CA (US);
Assignee:
LSI Logic Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01I 2/976 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01I 2/976 ;
Abstract
Growth of multiple gate oxides. By implanting different sites of a wafer with different doses of an oxide growth retardant, the entire wafer can grow oxides of different thicknesses even after being exposed to the same oxidation environment. The process is modular insofar as the implantation of one site has no effect on rate of growth of other sites.