The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Jan. 15, 2003
Masashi Fujimoto, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A pattern formation method of the present invention is one that forms a circuit pattern in a resist film upon a wafer by exposure using a plurality of phase-shift masks. A first phase-shift mask is for an isolated pattern including a pattern with a distance between adjacent patterns (inter-pattern distance) W of at least 400 nm, and a second phase-shift mask is for a dense pattern including patterns with inter-pattern distances W under 400 nm. Affects of the optical proximity effect are eliminated through providing optimum exposure conditions for the distances between adjacent patterns W and W using the plurality of phase-shift masks in accordance with respective inter-pattern distances W and W