The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Sep. 16, 2003
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A method of forming junction isolation to isolate active elements. A substrate having a plurality of active areas and an isolation area between active areas is provided. A first gate structure is formed on part of the substrate located in the active areas and, simultaneously, a second gate structure serving as a dummy gate structure is formed on the substrate located in the isolation area. A first doped region is formed in the substrate located at two sides of the first and the second gate structures. A bottom anti-reflection layer is formed on the substrate, the first gate structure and the second gate structure. Part of the bottom anti-reflection layer is etched to expose the second gate structure. The second gate structure is removed to expose the substrate. A second doped region serving as a junction isolation region is formed in the substrate located in the isolation area.